Author Affiliations
Abstract
1 Department of Photonics & Graduate Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, Taiwan Chiao Tung University, Hsinchu 30010, China
2 Institute of Photonic System, Taiwan Chiao Tung University, Tainan 71150, China
3 Saphlux Inc., Branford, Connecticut 06405, USA
4 Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, China
5 Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA
6 e-mail: wutingzhu@xmu.edu.cn
7 e-mail: hckuo@faculty.nctu.edu.tw
Red-green-blue (RGB) full-color micro light-emitting diodes (μ-LEDs) fabricated from semipolar (20-21) wafers, with a quantum-dot photoresist color-conversion layer, were demonstrated. The semipolar (20-21) InGaN/GaN μ-LEDs were fabricated on large (4 in.) patterned sapphire substrates by orientation-controlled epitaxy. The semipolar μ-LEDs showed a 3.2 nm peak wavelength shift and a 14.7% efficiency droop under 200 A/cm2 injected current density, indicating significant amelioration of the quantum-confined Stark effect. Because of the semipolar μ-LEDs’ emission-wavelength stability, the RGB pixel showed little color shift with current density and achieved a wide color gamut (114.4% NTSC space and 85.4% Rec. 2020).
Photonics Research
2020, 8(5): 05000630
Author Affiliations
Abstract
1 Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
2 Department of Electronic Science, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, China
3 e-mail: wutingzhu@xmu.edu.cn
4 Institute of Photonics System, National Chiao Tung University, Tainan 71150, Taiwan
5 HKUST Fok Ying Tung Research Institute, Nansha District, Guangzhou 511458, China
6 Department of Electrical Engineering and Computer Sciences and TBSI, University of California at Berkeley, Berkeley, California 94720, USA
7 e-mail: hckuo@faculty.nctu.edu.tw
Full-color displays based on micro light-emitting diodes (μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring (NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tuned from green to blue through strain relaxation. An Al2O3 layer was deposited on the sidewall of NR-μLEDs, which improved the photoluminescence intensity by 143.7%. Coupling with the exposed multiple quantum wells through nonradiative resonant energy transfer, red quantum dots were printed to NR-μLEDs for a full-color display. To further improve the color purity of the red light, a distributed Bragg reflector is developed to reuse the excitation light.
Photonics Research
2019, 7(4): 04000416
Author Affiliations
Abstract
1 Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, China
2 Department of Applied Chemistry, National Chiao Tung University, Hsinchu 30010, China
3 Department of Electric and Computer Engineering, Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong ASR, China
4 Institute of Photonic System, National Chiao Tung University, Tainan 711, China
In this study, a full-color emission red–green–blue (RGB) quantum-dot (QD)-based micro-light-emitting-diode (micro-LED) array with the reduced optical cross-talk effect by a photoresist mold has been demonstrated. The UV micro-LED array is used as an efficient excitation source for the QDs. The aerosol jet technique provides a narrow linewidth on the micrometer scale for a precise jet of QDs on the micro-LEDs. To reduce the optical cross-talk effect, a simple lithography method and photoresist are used to fabricate the mold, which consists of a window for QD jetting and a blocking wall for cross-talk reduction. The cross-talk effect of the well-confined QDs in the window is confirmed by a fluorescence microscope, which shows clear separation between QD pixels. A distributed Bragg reflector is covered on the micro-LED array and the QDs’ jetted mold to further increase the reuse of UV light. The enhanced light emission of the QDs is 5%, 32%, and 23% for blue, green, and red QDs, respectively.
(120.2040) Displays (160.4236) Nanomaterials (230.2090) Electro-optical devices (230.3670) Light-emitting diodes. 
Photonics Research
2017, 5(5): 05000411

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